Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2011-08-30
2011-08-30
Valentine, Jami M (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C438S900000
Reexamination Certificate
active
08008648
ABSTRACT:
Embodiments of the present invention are directed to nanoscale memristor devices that provide nonvolatile memristive switching. In one embodiment, a memristor device comprises an active region disposed between a first electrode and a second electrode. The device includes a first insulation element disposed between the first electrode and an outer portion of a first surface of the active region. The first insulation element is configured with one or more opening through which the first electrode makes physical contact with the active region. The device also includes a second insulation element disposed between the second electrode and an outer portion of a second surface of the active region. The second insulation element is configured with one or more opening through which the second electrode makes physical contact with the second surface.
REFERENCES:
patent: 2010/0253997 (2010-10-01), Li
Bratkovski Alexandre M.
Xia Qiangfei
Hewlett--Packard Development Company, L.P.
Valentine Jami M
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