Memristor amorphous metal alloy electrodes

Details Memristor amorphous metal alloy electrodes Memristor amorphous metal alloy electrodes

2009-09-30

2011-11-22

Dang, Trung Q (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S005000, C257SE45002, C257SE21158, C438S666000

Reexamination Certificate

active

08063395

ABSTRACT:
A nanoscale switching device comprises at least two electrodes, each of a nanoscale width; and an active region disposed between and in electrical contact with the electrodes, the active region containing a switching material capable of carrying a species of dopants and transporting the dopants under an electrical field, wherein at least one of the electrodes comprises an amorphous conductive material.

REFERENCES:
patent: 2010/0264397 (2010-10-01), Xia et al.
patent: 2011/0017977 (2011-01-01), Bratkovski et al.
patent: 2011/0121359 (2011-05-01), Yang et al.
patent: 2011/0181352 (2011-07-01), Kamins et al.
patent: 2011/0182107 (2011-07-01), Wu et al.
Yang et al., “The formation of amorphous alloy oxides as barriers used in magnetic tunnel junctions”, Journal of Applied Physics 98, 074508 (2005).

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