Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2011-07-26
2011-07-26
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S005000, C257SE29002, C438S102000, C438S103000, C365S163000
Reexamination Certificate
active
07985962
ABSTRACT:
A memristive device includes a first electrode, a second electrode, and an active region disposed between the first and second electrodes. At least one of the first and second electrodes is a metal oxide electrode.
REFERENCES:
patent: 2001/0053740 (2001-12-01), Kim
patent: 2003/0062553 (2003-04-01), Ramesh et al.
patent: 2008/0090337 (2008-04-01), Williams
Bratkovski Alexandre M.
Ohlberg Douglas
Yang Jianhua
Hewlett--Packard Development Company, L.P.
Smith Bradley K
Valentine Jami M
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