Memristive device

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material

Reexamination Certificate

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Details

C257S005000, C257SE29002, C438S102000, C438S103000, C365S163000

Reexamination Certificate

active

07985962

ABSTRACT:
A memristive device includes a first electrode, a second electrode, and an active region disposed between the first and second electrodes. At least one of the first and second electrodes is a metal oxide electrode.

REFERENCES:
patent: 2001/0053740 (2001-12-01), Kim
patent: 2003/0062553 (2003-04-01), Ramesh et al.
patent: 2008/0090337 (2008-04-01), Williams

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