Memory with word line voltage control

Details Memory with word line voltage control Memory with word line voltage control

1997-12-17

2000-01-18

Nelms, David

Static information storage and retrieval

Addressing

Particular decoder or driver circuit

365201, 365149, 36518911, 36518906, G11C 800

Patent

active

060162813

ABSTRACT:
In a memory array, decoding circuitry for selectively applying a turn-off voltage to selected word lines of the memory array for turning off conduction in the main conduction paths of the transistors whose gate electrodes are connected to the selected word lines and for selectively applying an increased turn-off voltage to selected word lines. The application of different values of turn-off voltage may be used to test the susceptibility of the memory array to gate induced drain leakage (GIDL) and to determine an optimum range of turn-off voltages to be applied to the word lines for operation with reduced leakage.

REFERENCES:
patent: 5297104 (1994-03-01), Nakashima

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