Memory with conductors between or in communication with...

Details Memory with conductors between or in communication with... Memory with conductors between or in communication with...

2005-08-16

2005-08-16

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257S422000, C365S170000, C365S171000, C365S172000, C365S173000

Reexamination Certificate

active

06930370

ABSTRACT:
A memory includes an array of magnetic memory cells, each magnetic memory cell being adapted to store a bit of information, interconnects in communication with the magnetic memory cells, and conductors in communication with the magnetic memory cells and the interconnects, the conductors filling spaces between adjacent magnetic memory cells of the array.

REFERENCES:
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 5956267 (1999-09-01), Hurst et al.
patent: 6147900 (2000-11-01), Pohm
patent: 6153443 (2000-11-01), Durlam et al.
patent: 6169686 (2001-01-01), Brug et al.
patent: 6259644 (2001-07-01), Tran et al.
patent: 6261893 (2001-07-01), Chang et al.
patent: 6351408 (2002-02-01), Schwarzl et al.
patent: 6424565 (2002-07-01), Brug et al.
patent: 6788570 (2004-09-01), Kim et al.

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