Memory test mode for wordline resistive defects

Details Memory test mode for wordline resistive defects Memory test mode for wordline resistive defects

1996-12-31

1998-07-14

Nguyen, Hoa T.

Excavating

371 214, G11C 2900

Patent

active

057815577

ABSTRACT:
A method and apparatus for detecting resistive defects in a memory device. A pulldown device is placed at the end of a wordline opposite the end of the wordline having a wordline driver. When the test mode is enabled the wordline pulldown device is turned on. By tailoring the on resistance of the pulldown device such that it is a few times larger than the wordline wire resistance, a resistive divider may be created between the wordline wire resistance and the pulldown device resistance. If a resistive defect exists in the wordline, the increased wordline resistance will create a voltage drop in the wordline when the pulldown device is turned on. This voltage drop indicates that a defect exists in the wordline, and the defect may be located by determining the area of the wordline in which the voltage drop occurs.

REFERENCES:
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patent: 5365482 (1994-11-01), Nakayama
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patent: 5463636 (1995-10-01), Nakayama
patent: 5687121 (1997-11-01), Lee et al.

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