Memory system with low current consumption and method for...

Details Memory system with low current consumption and method for... Memory system with low current consumption and method for...

2006-12-25

2010-12-28

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Powering

C365S230060, C327S530000

Reexamination Certificate

active

07859935

ABSTRACT:
A memory system includes: a high-voltage-supply booster circuit for driving an access control circuit from a low voltage for memory access to a high voltage for memory access by supplying electric charge that is stored in advance to an access control circuit in response to an access start request for a memory cell array; and a low-voltage-supply booster circuit for absorbing excess electric charge when the access control circuit is switched from the high voltage to the low voltage in response to an access end request for the memory cell array.

REFERENCES:
patent: 5587960 (1996-12-01), Ferris
patent: 5875133 (1999-02-01), Miyashita et al.
patent: 6075746 (2000-06-01), Ohsawa
patent: 2003/0137889 (2003-07-01), Lee
patent: 08-001177 (1996-01-01), None
Seong-Ik Cho et al., “Two-Phase Boosted Voltage Generator for Low-Voltage DRAMs,” IEEE Journal of Solid State Circuits, pp. 1726-1729, vol. 38, No. 10, Oct. 2003.
Yoshinobu Nakagome et et al., “An Experimental 1.5-V 64-Mb DRAM,” IEEE Journal of Solid State Circuits, pp. 465-472, vol. 26, No. 4, Apr. 1991.

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