Memory system for storing analog information

Details Memory system for storing analog information Memory system for storing analog information

1983-12-12

1985-12-10

Fears, Terrell W.

Static information storage and retrieval

Analog storage systems

365189, G11C 1140

Patent

active

045584311

ABSTRACT:
The non-volatile semiconductor memory elements having an MIS structure show a hysteresis curve in the gate voltage-the threshold voltage characteristic. The continuously changing region of the hysteresis curve is used to operate the memory elements as analog memories. The input analog signal is applied to the gate electrode of a selected memory element after it is converted to have a voltage within the continuously changing region, to change the threshold voltage of the selected memory element. The changed threshold voltage is read out in read-out operation.

REFERENCES:
patent: 4374430 (1983-02-01), Higuchi

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