Memory system current sense amplifier circuit

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307450, 307557, 307568, 307279, 365189, H03K 5153, H03K 508, H03K 19017, G11C 706

Patent

active

044645902

ABSTRACT:
A current responsive sense amplifier circuit is used in a semiconductor memory. The circuit includes means for reducing the voltage swings that are associated with the binary logic states.

REFERENCES:
patent: 3648071 (1972-03-01), Mrazek
patent: 4039860 (1977-08-01), Lambrechtse et al.
patent: 4239994 (1980-12-01), Stewart
patent: 4348601 (1982-09-01), Kitamura
patent: 4388541 (1983-06-01), Giebel
Boonstra et al, "A 4096-b One-Transistor Per Bit RAM with Internal Timing and Low Dissipation", IEEE-JSSC, vol. SC-8, No. 5, pp. 305-310; 10/73.
Chakravarti et al, "High Gain Sense Amplifier", IBM Tech. Discl. Bull.; vol. 20, No. 7, pp. 2607-2608, 12/1977.
Schuster, "Sense Amplifier", vol. 19, No. 2, pp. 710-713, 7/1976; IBM Tech. Discl. Bull.
Surgent, "Insulated Gate Field-Effect Transistor Sense Amplifier Latch", IBM Tech. Discl. Bull.; vol. 13, No. 9, pp. 2670-2671; 2/71.

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