Memory system capable of operating at high temperatures and...

Details Memory system capable of operating at high temperatures and... Memory system capable of operating at high temperatures and...

2006-04-18

2006-04-18

Loke, Steven (Department: 2811)

Semiconductor device manufacturing: process

Making regenerative-type switching device

Having field effect structure

C438S137000, C438S138000, C438S173000, C438S141000, C438S383000, C438S384000, C438S128000, C438S129000, C438S130000, C438S275000, C438S278000, C257S141000, C257S142000, C257S146000, C257S330000, C257S331000

Reexamination Certificate

active

07029956

ABSTRACT:
A memory system having a plurality of T-RAM cells arranged in an array is presented where each T-RAM cell has dual vertical devices and is fabricated over a SiC substrate. Each T-RAM cell has a vertical thyristor and a vertical transfer gate. The top surface of each thyristor is coplanar with the top surface of each transfer gate within the T-RAM array to provide a planar cell structure for the T-RAM array. A method is also presented for fabricating the T-RAM array having the vertical thyristors, the vertical transfer gates and the planar cell structure over the SiC substrate.

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Nemati et al, “A Novel High Density, Low Voltage SRAM Cell with a Vertical NDR Device”, 1 on VLSI Technology Digest of Technical Papers, IEEE, pp. 66-67, 1998.
Nemati et al, “A Novel Thyristor-based SRAM Cell (T-RAM) for High Speed, Low-Voltage, Gig Memories”, IEDM 1999, 283-286.

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