Memory switches based on metal oxide thin films

Electrical resistors – Resistance value responsive to a condition – Current and/or voltage

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338308, H01C 710, H01C 1012

Patent

active

049317636

ABSTRACT:
MnO.sub.2-x thin films (12) exhibit irreversible memory switching (28) with an "OFF/ON" resistance ratio of at least about 10.sup.3 and the tailorability of "ON" state (20) resistance. Such films are potentially extremely useful as a "connection" element in a variety of microelectronic circuits and arrays (24). Such films provide a pre-tailored, finite, non-volatile resistive element at a desired place in an electric circuit, which can be electrically turned OFF (22) or "disconnected" as desired, by application of an electrical pulse. Microswitch structures (10) constitute the thin film element, contacted by a pair of separate electrodes (16a, 16b) and have a finite, pre-selected ON resistance which is ideally suited, for example, as a programmable binary synaptic connection for electronic implementation of neural network architectures. The MnO.sub.2-x microswitch is non-volatile, patternable, insensitive to ultraviolet light, and adherent to a variety of insulating substrates (14), such as glass and silicon dioxide-coated silicon substrates.

REFERENCES:
patent: 3629863 (1971-12-01), Neale
patent: 3766508 (1973-10-01), Wada et al.
patent: 4682206 (1987-07-01), Tsuya et al.

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