Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – active junction...
Reexamination Certificate
2005-11-22
2005-11-22
Wilczewski, Mary (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, active junction...
C257S106000, C257S202000, C257S209000, C257S211000, C257S530000
Reexamination Certificate
active
06967350
ABSTRACT:
A memory structure that includes a first electrode, a second electrode, a third electrode, a control element of a predetermined device type disposed between the first electrode and the second electrode, and a memory storage element of the predetermined device type disposed between the second electrode and the third electrode. The memory storage element has a cross-sectional area that is less than a cross-sectional area of the control element.
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Frick Peter J.
Koll Andrew
Stasiak James
Tran Lung T.
Van Brocklin Andrew L.
Thomas Toniae M.
Wilczewski Mary
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