Memory structure and method of programming

Details Memory structure and method of programming Memory structure and method of programming

2007-06-05

2007-06-05

Phan, Trong (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185190, C365S185220, C365S185250

Reexamination Certificate

active

11116614

ABSTRACT:
A memory and a method for programming a memory device are discussed. The method comprises selecting a cell to program, wherein the cell is coupled to a bit line, applying a first programming pulse, wherein the first programming pulse comprises applying a first voltage to the bit line, verifying if the cell is programmed after applying the first programming pulse, and applying a second programming pulse to the bit line after applying the first programming pulse if the cell is not programmed after applying the first programming pulse, wherein second programming pulse comprises applying a second voltage to the bit line, wherein the second voltage is different than the first voltage.

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