Memory structure and method of manufacture

Details Memory structure and method of manufacture Memory structure and method of manufacture

2008-09-09

2008-09-09

Sefer, A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S004000, C257S001000, C257SE29105, C257S048000, C257S797000

Reexamination Certificate

active

11483264

ABSTRACT:
A solid state electrolyte memory structure includes a solid state electrolyte layer, a metal layer on the solid state electrolyte layer, and an etch stop layer on the metal layer.

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