Memory structure, a system, and an electronic device, as...

Details Memory structure, a system, and an electronic device, as... Memory structure, a system, and an electronic device, as...

2006-06-06

2006-06-06

Nguyen, VanThu (Department: 2824)

Static information storage and retrieval

Associative memories

Ferroelectric cell

C365S230030, C711S117000, C711S118000, C711S131000, C711S149000

Reexamination Certificate

active

07057911

ABSTRACT:
A memory circuit (1) comprises at least a non-volatile random access memory (3) and a random access memory (4). The memory circuit (1) also comprises a memory controller (5) connected by a first bus (6) to the non-volatile random access memory (3) and by a second bus (10) to the random access memory (4). Thus, data can be transmitted between non-volatile random access memory (3) and random access memory (4) via the memory controller (5). The memory circuit comprises a control bus (12) connected to the memory controller (5) to control operation of the memory circuit (1). The invention also relates to a corresponding system and corresponding electronic device (2) in which the memory circuit (1) is used. The invention also relates to a corresponding method in connection with a memory circuit, in which at least a non-volatile random access memory (3) and a random access memory (4) are used.

REFERENCES:
patent: 5056010 (1991-10-01), Huang
patent: 6335565 (2002-01-01), Miyamoto et al.
patent: 2002/0015349 (2002-02-01), Matsui
patent: 2002/0120820 (2002-08-01), Higuchi et al.
patent: 2002/0185337 (2002-12-01), Miura et al.
patent: 2003/0182517 (2003-09-01), Gooch
patent: 1 150 302 (2001-10-01), None

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