Memory storage device which regulates sense voltages

Details Memory storage device which regulates sense voltages Memory storage device which regulates sense voltages

2005-10-25

2005-10-25

Tran, Andrew Q. (Department: 2824)

Static information storage and retrieval

Powering

Data preservation

C365S226000, C365S096000, C365S100000, C365S105000, C365S148000, C365S163000, C365S175000

Reexamination Certificate

active

06958946

ABSTRACT:
A memory storage device includes a memory cell configurable to have at least a first conductive state and includes a first and second conductor each electrically coupled to the memory cell. A regulation circuit is configured to regulate a sense voltage on the second conductor to be independent of a current conducted through the first conductor when the memory cell is configured to have the first conductive state.

REFERENCES:
patent: 3706023 (1972-12-01), Yamada et al.
patent: 3829846 (1974-08-01), Berg et al.
patent: 4442509 (1984-04-01), Herndon
patent: 4531065 (1985-07-01), Nakayama et al.
patent: 4651302 (1987-03-01), Kimmel et al.
patent: 4652809 (1987-03-01), Barn
patent: 4910706 (1990-03-01), Hyatt
patent: 4984207 (1991-01-01), Tateno et al.
patent: 5103425 (1992-04-01), Kuo et al.
patent: 5193073 (1993-03-01), Bhuva
patent: 5339275 (1994-08-01), Hyatt
patent: 5726944 (1998-03-01), Pelley, III et al.
patent: 5777940 (1998-07-01), Su
patent: 5796651 (1998-08-01), Horne et al.
patent: 6385075 (2002-05-01), Taussig et al.
IBM Corporation, “Esaki Diode Memory”, IBM Technical Disclosure Bulletin, pp. 41-42, (Apr. 1961).
IBM Corporation, “Memory Circuits Power Gating Scheme”, IBM Technical Disclosure Bulletin, pp. 2114-2115, (Dec. 1972).
IBM Corporation, “Memory Diode Array Circuit”, IBM Technical Disclosure Bulletin, pp. 3353-3354, (Apr. 1972).
IBM Corporation, “Single Thyristor Static Memory and its Fabrication”, IBM Technical Disclosure Bulletin, pp. 1017-1025, (Aug. 1980).

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