Memory self-test circuit, semiconductor device and IC card...

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S185110, C365S201000

Reexamination Certificate

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07916549

ABSTRACT:
In a semiconductor device, a self-test circuit includes a write part for writing data in a given address of a special region of a nonvolatile memory; a read part for reading the written data from the given address; a verify part for determining whether or not the written data accords with the read data; and a decision part for determining soundness of the nonvolatile memory on the basis of a result of determination made by the verify part. In the case where the written data accords with the read data, the decision part determines that the nonvolatile memory is sound, and in the case where the data do not accord with each other, it determines that the nonvolatile memory is unsound.

REFERENCES:
patent: 6798698 (2004-09-01), Tanaka et al.
patent: 6930924 (2005-08-01), Takase et al.
patent: 2005/0005131 (2005-01-01), Yoshida et al.
patent: 2006/0023500 (2006-02-01), Kawabata et al.
patent: 2004-102635 (2004-04-01), None

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