Memory self-test

Excavating

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Details

371 224, 364717, G06F 1100

Patent

active

049032666

ABSTRACT:
A system and method for on-chip self test of memory circuits is disclosed. Memory circuit testing is accomplished by using a random pattern generator based upon a primitive polynomial and including a linear feedback shift register having at least one stage in addition to the number of address lines required for addressing the memory. The random pattern generator is capable of cycling through all memory addresses, including the all zero address. During each of four random pattern generator cycles, known data is written in or read out of each memory cell. By including means for writing and reading the complement of data during different random pattern generator cycles, both possible states of each memory cell may be tested. The outputted data is routed to multiple input signature register which generates a data signature for the memory which can in turn be compared to that known for a good memory. Logic circuit testing may also be accomplished using a known level sensitive scan design technique, the test output data also being outputted to the multiple input signature register. A single data signature may then be generated which is indicative of the good or bad status of both the logic and memory circuits.

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