Memory selection/deselection circuitry having a wordline dischar

Static information storage and retrieval – Addressing – Particular decoder or driver circuit

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Details

36518911, 365204, 3652256, G11C 700, G11C 800

Patent

active

053011635

ABSTRACT:
A selection circuit for a bipolar ECL memory having memory cell connected to cell selection lines and, more particularly, to upper and lower wordlines. The circuit includes a line driver connected to the upper wordline, an input stage for controlling the line driver to activate the upper wordline connected thereto in response to an address signal, and a switching device responsive to the input stage for applying a discharging current to the lower word line to speed up deactivation of the memory cell in response to a change in the address signal. In one embodiment, the line driver is also turned on at an increased rate for a limited time following application of the address signal to speed up the activation of the line.

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Varadarajun, H. "Decoder for Ground-Up Array with STL-Compatible Output" IBM Technical Disclosure Bulletin vol. 20 No. 4 Sep. 1977.
Bordon, G. et al. "Top-Line Selection Circuit in a Memory Cell" IBM Technical Disclosure Bulletin vol. 20 No. 8 Jan. 1978.
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Homma et al., "A 35 ns, 2-W, 20-mm, 16-kbit ECL Bipolar RAM", IEEE Journal of Solid State Circuits, vol. SC-21, No. 5, Oct. 1986 pp. 675-680.

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