Memory power management

Static information storage and retrieval – Powering

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S063000, C365S189090

Reexamination Certificate

active

07619945

ABSTRACT:
Memory power management is described. A non-volatile memory array is provided, the array including separately controlled memory blocks. At least two charge pumps are coupled to the array, the charge pumps being configured to provide at least two voltages. Logic is configured to control how the voltages are delivered to the memory blocks.

REFERENCES:
patent: 3886577 (1975-05-01), Buckley
patent: 5296716 (1994-03-01), Ovshinsky et al.
patent: 5612913 (1997-03-01), Cappelletti et al.
patent: 5835396 (1998-11-01), Zhang
patent: 6034882 (2000-03-01), Johnson et al.
patent: 6084800 (2000-07-01), Choi et al.
patent: 6204139 (2001-03-01), Liu et al.
patent: 6473332 (2002-10-01), Ignatiev et al.
patent: 6487106 (2002-11-01), Kozicki
patent: 6531371 (2003-03-01), Hsu et al.
patent: 6614699 (2003-09-01), Tanzawa
patent: 6657888 (2003-12-01), Doudin et al.
patent: 6731528 (2004-05-01), Hush et al.
patent: 6753561 (2004-06-01), Rinerson et al.
patent: 6788576 (2004-09-01), Roizin
patent: 6807088 (2004-10-01), Tsuchida
patent: 6825489 (2004-11-01), Kozicki
patent: 6836421 (2004-12-01), Rinerson et al.
patent: 6856536 (2005-02-01), Rinerson et al.
patent: 7002197 (2006-02-01), Perner et al.
patent: 7218984 (2007-05-01), Bayat et al.
patent: 7317630 (2008-01-01), Telecco et al.
patent: 7460385 (2008-12-01), Gruber et al.
patent: 2002/0028541 (2002-03-01), Lee et al.
patent: 2003/0132456 (2003-07-01), Miyai et al.
patent: 2003/0151959 (2003-08-01), Tringali et al.
patent: 2004/0141369 (2004-07-01), Noguchi
patent: 2005/0135148 (2005-06-01), Chevallier et al.
patent: 2005/0151156 (2005-07-01), Wu et al.
patent: 2006/0050598 (2006-03-01), Rinerson et al.
patent: 2006/0164882 (2006-07-01), Norman
patent: 2006/0171200 (2006-08-01), Rinerson et al.
patent: 2007/0223282 (2007-09-01), Sarig
patent: 2008/0173975 (2008-07-01), Chen et al.
U.S. Appl. No. 11/449,105, filed Jun. 8, 2006, Robert Norman.
U.S. Appl. No. 11/478,163, filed Jun. 28, 2006, Robert Norman.
U.S. Appl. No. 60/536,115, filed Jan. 13, 2004, Wu et al.
A.Baikalov, et al, “Field -driven hysteretic and reversible resistive switch at the Ag-Pr0.7Ca0.3MnO3 interface” Applied Physics Letters, vol. 83, No. 5, Aug. 4, 2003, pp. 957-959.
A. Beck, J. Bednorz, A. Bietsch, Ch. Gerber, C. Rossel, D. Widmer, “Reproducible switching effect in thin oxide films for memory applications,” Applied Physics Letters, vol. 77, No. 1, Jul. 3, 2000, pp. 139-141.
A. Sawa, et al, “Hysteretic current-volyage characteristics and resisitance switching at a rectifying Ti/Pr0.7Ca0.3MnO3interface” Applied Physics Letters, vol. 85, No. 18, Nov. 1, 2004, pp. 4073-4075.
C. Rossel, G.I. Meijer, D. Brémaud, D. Widmer, “Electrical current distribution across a metal-insulator-metal structure during bistable switching,” Journal of Applied Physics, vol. 90, No. 6, Sep. 15, 2001, pp. 2892-2898.
David Oxley, “Memory Effects in Oxide Films” in Oxides and Oxide Films, vol. 6, pp. 251-325 (Chapter 4) (Ashok. K. Vijh ed., Marcel Drekker) (1981).
J.G. Simmons and R.R. Verderber, “New Conduction and Reversible Memory Phenomena in Thin Insulating Films,” Proc. Roy. Soc. A., 301 (1967), pp. 77-102.
Liu et al., “A New Concept for Non-Volatile Memory: The Electric-Pulse Induced Resistive Change Effect in Colossal Magnetoresistive Thin Films,” Non-Volatile Memory Technology Symposium, Nov. 7, 2001, pp. 1-7.
Liu et al., “Electric-pulse-induced reversible resistance change effect in magnetoresistive films,” Applied Physics Letters, vol. 76, No. 19, May 8, 2000, pp. 2749-2751.
R.E. Thurstans and D.P. Oxley, “The Electroformed metal-insulator-metal structure: A comprehensive model,” J. Phys. D.: Appl. Phys. 35 (2002), Apr. 2, 2002, pp. 802-809.
Y. Watanabe, J.G. Bednorz, A. Bietsch, Ch. Gerber, D. Widmer, A. Beck, “Current-driven insulator-conductor transition and nonvolatile memory in chromium-doped SrTiO3 single crystals,” Applied Physics Letters, vol. 78, No. 23, Jun. 4, 2001, pp. 3738-3740.
R. Oligschlaeger, R. Waser, R. Meyer, S. Karthäuser, R. Dittmann, “Resistive switching and data reliability of epitaxial (Ba,Sr)TiO thin films,” Applied Physics Letters, 88 (2006), 042901.
S. Lai, T. Lowrey, “OUM—A 180 nm nonvolatile memory cell element technology for standalone and embedded applications,” IEEE International Electron Device Meeting, Technical Digest, 803 (2001).
J. Mizusaki J, Y. Yonemura, H. Kamata, K. Ohyama, N. Mori, H. Takai, H. Tagawa, M. Dokiya, K. Naraya, T. Sasamoto, H. Inaba, T. Hashimoto, “Electronic conductivity, Seebeck coefficient, defect and electronic structure of nonstoichiometric La1-xSrxMnO3,” Solid State Ionics 132, 167 (2000).
Zhao Y. G. ; Rajeswari M. ; Srivastava R. C. ; Biswas A. ; Ogale S. B. ; Kang D. J. ; Prellier W. ; Zhiyun Chen ; Greene R. L. ; Venkatesan T., “Effect of oxygen content on the structural, transport, and magnetic properties of La1-deltaMn1-deltaO3thin films,” Journal of Applied Physics, vol. 86, No. 11, Dec. 1999, pp. 6327-6330.
J. R. Stetter, W. R. Penrose, S. Yao, “Sensors, Chemical Sensors, Electrochemical Sensors, and ECS,” Journal of The Electrochemical Society, 150 (2), S11-S16 (2003).
B. C. H. Steele, A. Heinzel, “Materials for Fuel-Cell Technologies,” Nature 414, Nov. 2001, pp. 345-352.
A. Reller, J. M. Thomas, D. A. Jefferson, M. K. Uppal, “Superstructures Formed by the Ordering of Vacancies in a Selective Oxidation Catalyst: Grossly Defective CaMnO3,” Proceedings of the Royal Society of London, vol. 394, No. 1807 Aug. 1984, pp. 223-241.
A. J. Millis, “Cooperative Jahn-Teller effect and electron-phonon coupling in La1-χAχMnO3,” Phys. Rev. B 53, 8434-8441 (1996).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Memory power management does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory power management, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory power management will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4140883

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.