Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2006-09-05
2006-09-05
Chambliss, Alonzo (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257S724000, C257S738000, C257S778000, C257SE23023, C361S774000, C361S777000
Reexamination Certificate
active
07102221
ABSTRACT:
The invention is intended to increase the density for mounting the semiconductor chips on a memory-module, to increase the capacity of the memory-module, and to realize the memory-module capable of coping with high-speed buses. The memory-module comprises a plurality of WPPs having protruded terminals as external terminals and wiring portions for expanding the pitch among the protruded terminals to be wider than the pitch among the bonding electrodes of semiconductor chips, TSOPs having semiconductor chips, outer leads as external terminals, and are mounted via the outer leads that are electrically connected to the bonding electrodes of the semiconductor chips, and a module board supporting the WPPs and the TSOPs, wherein the WPPs and the TSOPs are mounted by the simultaneous reflowing in a mixed manner on the module board.
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Miyamoto Toshio
Nishimura Asao
Sugano Toshio
Chambliss Alonzo
Mattingly ,Stanger ,Malur & Brundidge, P.C.
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