Memory, memory operating method, and memory system

Details Memory, memory operating method, and memory system Memory, memory operating method, and memory system

2011-02-15

2011-02-15

Auduong, Gene N (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185180, C365S185050

Reexamination Certificate

active

07889568

ABSTRACT:
A memory includes a plurality of memory cells each of which includes a memory transistor and a selection transistor; a control gate line; a selection gate line; a source line; a bit line; a first driver that sets the control gate line and the selection gate line at a first voltage in a program operation; a second driver that sets the source line at a second voltage in the program operation, and sets the source line at a third voltage higher than the second voltage while the control gate line and the selection gate line are set at the first voltage; and a third driver that sets the bit line at a fourth voltage after the source line is set at the second voltage, the bit line being coupled to a memory cell being programmed.

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patent: 2004-199837 (2004-07-01), None
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