Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Patent
1995-05-19
1996-01-30
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
257393, 257401, 257904, H01L 27085, H01L 2711
Patent
active
054882486
ABSTRACT:
An integrated circuit, illustratively an SRAM, having a low resistance path between an access transistor and a pull down transistor is disclosed. Connection for the cell load to the node between the access transistor and pull down transistor is made outside the defined current path.
REFERENCES:
patent: 4212083 (1980-07-01), Rao
patent: 4982250 (1991-01-01), Manos, II et al.
patent: 5072286 (1991-12-01), Minami et al.
Lee Kuo-Hua
Sung Janmye
AT&T Corp.
Monin, Jr. Donald L.
Rehberg John T.
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