Memory integrated circuit

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity

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Details

257393, 257401, 257904, H01L 27085, H01L 2711

Patent

active

054882486

ABSTRACT:
An integrated circuit, illustratively an SRAM, having a low resistance path between an access transistor and a pull down transistor is disclosed. Connection for the cell load to the node between the access transistor and pull down transistor is made outside the defined current path.

REFERENCES:
patent: 4212083 (1980-07-01), Rao
patent: 4982250 (1991-01-01), Manos, II et al.
patent: 5072286 (1991-12-01), Minami et al.

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