Static information storage and retrieval – Floating gate – Particular biasing
Patent
1994-12-21
1996-07-16
Nelms, David C.
Static information storage and retrieval
Floating gate
Particular biasing
365203, 365204, 365208, 365194, G11C 1604
Patent
active
055373496
ABSTRACT:
A random-access memory with an accelerated access time. One or more of the preliminary operations of the sequence of operations carried out for accessing the memory are anticipated by performing the anticipated operation or operations during the end of a sequence of a previous memory access. The anticipated operation is preferably that of the deselection of the bit lines of the memory.
REFERENCES:
patent: 4616344 (1986-10-01), Noguchi et al.
patent: 4860256 (1989-08-01), Devin et al.
patent: 4947375 (1990-08-01), Gaultier et al.
patent: 4958324 (1990-09-01), Devin
patent: 4964079 (1990-10-01), Devin
patent: 5022001 (1991-06-01), Kowalski
patent: 5058069 (1991-10-01), Gaultier et al.
patent: 5099451 (1992-03-01), Sourgen et al.
patent: 5177707 (1993-01-01), Edme
patent: 5303189 (1994-04-01), Devin et al.
Electronics, vol. 56, No. 24, Dec. 1, 1983, New York US pp. 118-121, Mehrotra et al. "Oxynitride film yields long-lived 64-K EE-PROM cells".
IEEE Journal of Solid-State Circuits, vol. 24, No. 5, Oct. 1989 New York US, pp. 1250-1258, Hoff et al. "A 23ns 256K EEPROM with double layer metal and address transition detection".
IEEE Journal of Solid-State Circuits, vol. 25, No. 5, Oct. 1990, New York US, pp. 1141-1146, Kuriyama et al. "A 16-ns 1-Mb CMOS EEPROM".
Patent Abstracts of Japan, vol. 12, No. 16 (P-656) Jan. 19, 1988 & JP-A-62172595 (Mitsubishi Electric Corp.).
Driscoll David M.
Morris James H.
Nelms David C.
Niranjan F.
SGS-Thomson Microelectronics S.A.
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