Memory implant profile for improved channel shielding in electri

Details Memory implant profile for improved channel shielding in electri Memory implant profile for improved channel shielding in electri

1983-11-14

1985-06-04

Clawson, Jr., Joseph E.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 2312, 357 54, 357 91, 365184, H01L 2978

Patent

active

045217963

ABSTRACT:
An Electrically Alterable Read Only Memory device including at least one cell in a substrate having source and drain channels with a memory gate region therebetween with the substrate in the memory gate region having therein a first impurity material of a first conductivity type to establish a desired write threshold voltage and a second impurity material of a second conductivity type opposite to said first type to tailor the surface concentration profiles of the impurity material in the memory gate region of the substrate.

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patent: 4052229 (1977-10-01), Pashley
patent: 4101921 (1978-07-01), Shimada et al.
patent: 4151538 (1979-04-01), Polinsky et al.
patent: 4198252 (1980-04-01), Hsu
patent: 4307411 (1981-12-01), Carnes et al.
patent: 4353083 (1982-10-01), Trudel et al.
G. Schottky, "Decrease of FET . . . Oxidation," S--S Electr., vol. 14, pp. 467-474, 1971.

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