Memory having shared storage material

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material

Reexamination Certificate

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Details

C257S003000, C257SE29002, C365S148000

Reexamination Certificate

active

07977661

ABSTRACT:
An integrated circuit includes a bit line, a plurality of access devices coupled to the bit line, and a plate of phase change material. The integrated circuit includes a plurality of phase change elements contacting the plate of phase change material and a plurality of first contacts. Each first contact is coupled between an access device and a phase change element.

REFERENCES:
patent: 4319342 (1982-03-01), Scheuerlein
patent: 5714768 (1998-02-01), Ovshinsky et al.
patent: 5814527 (1998-09-01), Wolstenholme et al.
patent: 6597031 (2003-07-01), Kuge
patent: 7038261 (2006-05-01), Horii
patent: 7053431 (2006-05-01), Ogiwara
patent: 7071485 (2006-07-01), Takuara et al.
patent: 7368802 (2008-05-01), Hayakawa
patent: 2003/0185047 (2003-10-01), Khouri et al.
patent: 2005/0098811 (2005-05-01), Ogiwara
patent: 2005/0185444 (2005-08-01), Yang et al.
patent: 102005001253 (2006-07-01), None
“OUM—180 nm Nonvolatile Memory Cell Element Technology for Stand Alone and Embedded Applications”, Stefan Lai, et al., Intel Corporation (4 pgs.).
“Current Status of the Phase Change Memory and its Future”, Stefan Lai, Intel Corporation, IEEE 2003 (4 pgs.).
“Phase-Change Chalcogenide Nonvolatile RAM Completely Based on CMOS Technology”, Y.N. Hwang, et al., IEEE 2003 (3 pgs.).
“OUM, Ovonic Unified Memory”, ECD Ovonics, Research Report, http://www.ovonics.com/PDFs/Elec—Memory—Research—Report/OUM.pdf, 1999 (80 pgs.).
“A Novel Cell Technology Using N-doped GeSbTe Films for Phase Change RAM”, H. Horii, et al., Samsung Electronics Co., Ltd, (2 pgs.).
“Full Integration and Reliability Evaluation of Phase-Change RAM Based on .24um-CMOS Technologies”, Y.N. Hwang, et al., Symposium on VLSI Technology Digest of Technical Papers, 2003 (2 pgs.).
“Switching Current Scaling and Reliability Evaluation in PRAM”, C.W. Jeong, et al., Samsung Electronics Co., Ltd., (2 pgs.).
“Highly Scalable On-axis Confined Cell Structure for High Denisty PRAM beyond 256Mb”, S.L. Cho, et al., Symposium of VLSI Technology Digest of Technical Papers, 2005 (2 pgs.).
“Novel uTrench Phase-Change Memory Cell for Embedded and Stand-Alone Non-Volatile Memory Applications”, F. Pellizzer, et al., Symposium of VLSI Technology Digest of Technical Papers, 2004 (2 pgs.).
“Highly Manufacturable High Density Phase Change Memory of 64Mb and Beyond”, S.J. Ahn, et al., Samsung Electronics Co., Ltd., (4 pgs.).
A 0.1um 1.8V 256Mb 66MHz Synchronous Burst PRAM., Sangeom Kang, et al., ISSCC 2006 (3 pgs.).

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