Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2011-06-07
2011-06-07
Luu, Pho M (Department: 2824)
Static information storage and retrieval
Floating gate
Particular connection
C365S185120, C365S185280, C365S185290
Reexamination Certificate
active
07957190
ABSTRACT:
A memory comprising a plurality of P-channel split-gate memory cells are organized in rows and columns. Each of the plurality of P-channel split-gate memory cells comprises a select gate, a control gate, a source region, a drain region, a channel region, and a charge storage layer comprising nanocrystals. Programming a memory cell of the plurality of P-channel split-gate memory cells comprises injecting electrons from a channel region of the memory cell to the charge storage layer. Erasing the memory cell comprises injecting holes from the channel region to the charge storage region.
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Hong Cheong M.
Kang Sung-Taeg
Winstead Brian A.
Freescale Semiconductor Inc.
Hill Daniel D.
Luu Pho M
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