Memory having CBRAM memory cells and method

Details Memory having CBRAM memory cells and method Memory having CBRAM memory cells and method

2008-05-13

2008-05-13

Le, Thong Q. (Department: 2827)

Static information storage and retrieval

Read only systems

Semiconductive

C365S102000

Reexamination Certificate

active

07372716

ABSTRACT:
A memory cell arrangement has a plurality of memory cells of the CBRAM type and a programming apparatus, the memory cells being arranged along bit lines and each bit line having a programming apparatus. The invention provides for the programming apparatus to comprise a charge storage device and a switchable charging apparatus. The inventive method for programming memory cells of the CBRAM type is carried out in such a manner that, a given quantity of an electrical charge is stored in a charge storage device, and the stored quantity of electrical charge is transferred to the memory cell to be programmed.

REFERENCES:
patent: 5491665 (1996-02-01), Sachdev
patent: 6333878 (2001-12-01), Ooishi
patent: 6560135 (2003-05-01), Matsuoka et al.
patent: 2002/0075743 (2002-06-01), Ooishi et al.
patent: 2003/0047767 (2003-03-01), Luetzen et al.
patent: 2004/0031974 (2004-02-01), Bross
patent: 2005/0012697 (2005-01-01), Suzuki
patent: 2007/0053224 (2007-03-01), Happ et al.
patent: 10 2004 019 860.8 (2004-04-01), None
patent: 00/48196 (2000-08-01), None
T. Mikolajick, C.U.Pinnow, “The Future of Nonvolatile Memories,” Non-Volatile Memory Technology Symposium 2002, Honolulu Hawaii, Nov. 4-6, 2002, http://klabs.org/richcontent/MemoryContent
vmt symp
vmts2002/docs/02/02 mik olajic s.pdf.

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