Memory having cap structure for magnetoresistive junction...

Details Memory having cap structure for magnetoresistive junction... Memory having cap structure for magnetoresistive junction...

2005-04-29

2009-10-13

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257S422000, C438S003000, C438S008000, C438S634000, C438S740000

Reexamination Certificate

active

07602032

ABSTRACT:
A memory and method of making a memory is disclosed. In one embodiment, the memory includes a cap structure for a magnetoresistive random access memory device including an etch stop layer formed over an upper magnetic layer of a magnetoresistive junction (MTJ/MCJ) layered structure and a hardmask layer formed over said etch stop layer, wherein said etch stop layer is selected from a material such that an etch chemistry used for removing said hardmask layer has selectivity against etching said etch stop layer material. In a method of opening the hardmask layer, an etch process to remove exposed portions of the hardmask layer is implemented, where the etch process terminates on the etch stop layer.

REFERENCES:
patent: 2003/0179496 (2003-09-01), Jayasekara
patent: 2003/0180968 (2003-09-01), Nallan et al.
patent: 2003/0186552 (2003-10-01), Amano et al.
patent: 2004/0084400 (2004-05-01), Costrini et al.
patent: 2005/0051820 (2005-03-01), Stojakovich et al.
patent: 2005/0097725 (2005-05-01), Baseman et al.
patent: 2006/0022286 (2006-02-01), Leuschner et al.
patent: 19728473 (1999-01-01), None
patent: 102004043855 (2005-05-01), None
patent: 1248305 (2002-10-01), None
patent: 2004040602 (2004-05-01), None

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