Memory formed by using defects

Details Memory formed by using defects Memory formed by using defects

2011-08-30

2011-08-30

Le, Thong Q (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S103000, C365S114000, C365S174000, C365S212000

Reexamination Certificate

active

08009479

ABSTRACT:
A non-volatile memory is provided. The non-volatile memory comprises at least a silicon-on-insulator transistor including a substrate; an insulating layer disposed on the substrate; an active region disposed on the insulating layer; and an energy barrier device disposed in the active region and outputting a relatively small current when the non-volatile memory is read.

REFERENCES:
patent: 2009/0201739 (2009-08-01), Terai
Bawedin et al.: “Innovating SOI Memory Devices Based on Floating-Body Effects”, Solid State Electronics 51 (2007) Apr. 25, 2007, pp. 1252-1262.

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