Memory employing independent dynamic reference areas

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S185210, C365S210100, C365S210140

Reexamination Certificate

active

07961519

ABSTRACT:
A memory that employs separate Dref areas that are independently accessed to provide a threshold voltage reference signal. The memory includes the separate Dref areas, a data area positioned between the Dref areas, one or more sense amplifiers, and a switch component. The switch component is arranged to receive addressing data and to independently couple one of the separate Dref areas to the sense amplifiers based, at least in part, on a physical proximity of individual memory cells along a word line.

REFERENCES:
patent: 6839279 (2005-01-01), Yamada
patent: 7321513 (2008-01-01), Tsukidate
patent: 7729169 (2010-06-01), Yano et al.
patent: 7791946 (2010-09-01), Kikuchi et al.
patent: 2004/0208074 (2004-10-01), Schnabel et al.
patent: 2007/0291550 (2007-12-01), Yang et al.
patent: 2008/0144388 (2008-06-01), Yamashita
patent: 2004110881 (2004-04-01), None

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