Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2006-09-05
2006-09-05
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C438S099000
Reexamination Certificate
active
07102156
ABSTRACT:
A memory element includes a first electrode, a passive layer on and in contact with the first electrode, a polyfluorene active layer on and in contact with the active layer, and a second electrode on and in contact with the polyfluorene active layer. The chemical structure of the polyfluorene active layer may be altered to take different forms, each providing a different memory element operating characteristic.
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Gaun David
Kaza Swaroop
Kingsborough Richard
Nickel Alexander
Pangrle Suzette
Huynh Andy
Spansion LLC Advanced Micro Devices, Inc
Taylor Earl
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