Memory element with nitrogen-containing active layer

Details Memory element with nitrogen-containing active layer Memory element with nitrogen-containing active layer

2007-04-24

2007-04-24

Baumeister, B. William (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257SE51027

Reexamination Certificate

active

11021959

ABSTRACT:
The present memory structure includes first and second electrodes, a passive layer, and an active layer containing nitrogen, the passive and active layers being between the first and second electrodes. Metal ions in the active layer bind to the nitrogen thereof, enhancing retention of the metal ions in the active layer for improved, stable data retention.

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Bin Liu, Wang-Lin Yu, Jian Pei, Shao-Yong Liu, Yee-Hing Lai and Wei Huang. “Design and Synthesis of Bipyridyl-Containing Conjugated Polymers: Effects of Polymer Rigidity on Metal Ion Sensing.” Macromolecules. 34 (2001): 7932-7940.

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