Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Patent
1998-04-20
2000-07-11
Crane, Sara
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
257 4, 257 5, H01L 4700
Patent
active
060876743
ABSTRACT:
An electrically operated, single cell memory element comprising: a volume of memory material defining a single-cell memory element, the memory material comprising a heterogeneous mixture of a phase-change material and a dielectric material; and means for delivering an electrical signal to at least a portion of the volume of memory material. An electrically operated, single-cell memory element comprising: a volume of memory material defining the single-cell memory element, the memory material comprising a phase-change material and a dielectric material where the phase-change material has a plurality of detectable resistivity values and can be set directly to one of the resistivity values without the need to be set to a specific starting or erased resistivity value, regardless of the previous resistivity value of the material, in response to an electrical signal; and means for delivering the electrical signal to at least a portion of the volume of memory material.
REFERENCES:
patent: 3271591 (1966-09-01), Ovshinsky
patent: 3685028 (1972-08-01), Wakabayashi et al.
patent: 3715634 (1973-02-01), Ovshinsky
patent: 4710899 (1987-12-01), Young et al.
patent: 5124183 (1992-06-01), Nakano et al.
patent: 5557596 (1996-09-01), Gibson et al.
patent: 5687112 (1997-11-01), Ovshinsky
patent: 5825046 (1998-10-01), Czubatyj et al.
Czubatyj Wolodymyr
Klersy Patrick J.
Kostylev Sergey
Ovshinsky Standford R.
Pashmakov Boil
Crane Sara
Energy Conversion Devices Inc.
Schlazer Philip H.
Schumaker David W.
Siskind Marvin S.
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