Memory element with high metastability-immunity

Details Memory element with high metastability-immunity Memory element with high metastability-immunity

1990-12-19

1992-07-07

Hudspeth, David

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307443, 307446, H03K 19003

Patent

active

051285622

ABSTRACT:
In a memory element comprising interconnected logic gates with field effect transistors metastable states are to be avoided. The device's immunity against staying in metastable states is considerably raised by coupling a supply terminal of each logic gate to a power supply voltage via a base-emitter path of a bipolar transistor that has its collector coupled to the logic gate's output.

REFERENCES:
patent: 4719373 (1988-01-01), Masuda et al.
patent: 4845386 (1989-07-01), Ueno
patent: 4929850 (1990-05-01), Breuninger
patent: 4963772 (1990-10-01), Dike
patent: 4983862 (1991-01-01), Suzuki et al.
patent: 4999528 (1991-03-01), Keech
patent: 5047669 (1991-09-01), Iwamura et al.

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