Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2006-08-25
2011-10-04
Gurley, Lynne A (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C365S148000, C257S040000, C257SE29170, C257SE51025
Reexamination Certificate
active
08030637
ABSTRACT:
An information storage element has a carbon storage material including hexagonally bonded carbon and tetrahedrally bonded carbon. The information is formed by a changeable ratio of hexagonally bonded carbon and tetrahedrally bonded carbon.
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Arena Andrew O
Gurley Lynne A
Qimonda AG
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