Memory element using active layer of blended materials

Details Memory element using active layer of blended materials Memory element using active layer of blended materials

2008-05-27

2008-05-27

Nguyen, Dao H (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257S642000, C257S643000, C257SE21011, C257SE51027, C257SE51030, C438S099000, C438S190000

Reexamination Certificate

active

07378682

ABSTRACT:
The present memory device has first and second electrodes, a passive layer between the first and second electrodes and on and in contact with the first electrode, and an active layer between the first and second electrodes and on and in contact with the passive layer and second electrode, for receiving a charged specie from the passive layer. The active layer is a mixture of (i) a first polymer, and (ii) a second polymer for enhancing ion transport, improving the interface and promoting a rapid and substantially uniform distribution of the charged specie in the active layer, i.e., preventing a localized injection of the charged species. These features result in a memory element with improved stability, a more controllable ON-state resistance, improved switching speed and a lower programming voltage.

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Kinder et al., StructuralOrderingin F8T2 Polyfluorenethin-Film Transistors,SPIE vol. 5217, pp. 36-37, 2003.

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