Memory element, memory apparatus, and semiconductor...

Active solid-state devices (e.g. – transistors – solid-state diode – Semiconductor is an oxide of a metal or copper sulfide

Reexamination Certificate

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C257S537000, C257S776000, C257SE29081, C257SE45003

Reexamination Certificate

active

07964869

ABSTRACT:
A memory element comprises a first electrode, a second electrode, and a resistance variable film2which is disposed between the first and second electrodes to be connected to the first and second electrodes, a resistance value of the resistance variable film2varying based on voltage applied between the first and second electrodes, the resistance variable film2includes a layer2amade of Fe3O4and a layer2bmade of Fe2O3or a spinel structure oxide which is expressed as MFe2O4(M: metal element except for Fe); and the layer2amade of Fe3O4is thicker than the layer2bmade of Fe2O3or the spinel structure oxide.

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Seo, S., et al., “Conductivity switching characteristics and reset currents in NiO films”, Applied Physics Letters, 2005, pp. 093509-1-093509-3, vol. 86, American Institute of Physics.

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