Memory element comprising an organic compound and an insulator

Details Memory element comprising an organic compound and an insulator Memory element comprising an organic compound and an insulator

2011-06-07

2011-06-07

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257S296000, C257S321000, C257SE51003, C438S099000

Reexamination Certificate

active

07956352

ABSTRACT:
On object of the invention is to provide a non-volatile memory device, in which data can be added to the memory device after a manufacturing process and forgery and the like by rewriting can be prevented, and a semiconductor device including the memory device. Another object of the invention is to provide a highly-reliable, inexpensive, and nonvolatile memory device and a semiconductor device including the memory device. A memory element includes a first conductive layer, a second conductive layer, a first insulating layer with a thickness of 0.1 nm or more and 4 nm or less being in contact with the first conductive layer, and an organic compound layer interposed between the first conductive layer, the first insulating layer, and the second conductive layer.

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