Memory element and semiconductor device

Details Memory element and semiconductor device Memory element and semiconductor device

2007-04-25

2009-06-23

Luu, Pho M. (Department: 2824)

Static information storage and retrieval

Radiant energy

Liquid crystal

C365S129000, C365S189011, C365S189080

Reexamination Certificate

active

07551471

ABSTRACT:
The memory element includes a first conductive layer, a second conductive layer, a layer containing a compound which can exhibit liquid crystallinity which is interposed between the first conductive layer and the second conductive layer, and a layer containing an organic compound which is interposed between the first conductive layer and the second conductive layer and is in contact with the layer containing the compound which can exhibit liquid crystallinity. The layer containing the compound which can exhibit liquid crystallinity is formed in contact with the first conductive layer and is a layer which transfers at least from a first phase to a second phase.

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Möller. S et al., “A polymer/semiconductor write-once read-many-times memory”, Nature, Nov. 13, 2003, vol. 426, pp. 166-169.

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