Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2007-05-29
2007-05-29
Lindsay, Jr., Walter (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C257SE21577, C257SE21412, C257SE21134, C257SE21133, C257SE21589
Reexamination Certificate
active
10988836
ABSTRACT:
A method for controlling silver doping of a chalcogenide glass in a resistance variable memory element is disclosed herein. The method includes forming a thin metal containing layer having a thickness of less than about 250 Angstroms over a second chalcogenide glass layer, formed over a first metal containing layer, formed over a first chalcogenide glass layer. The thin metal containing layer preferably is a silver layer. An electrode may be formed over the thin silver layer. The electrode preferably does not contain silver.
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Campbell Kristy A.
Gilton Terry L.
Moore John T.
Dickstein & Shapiro LLP
Dinh Thu-Huong
Lindsay, Jr. Walter
Micro)n Technology, Inc.
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