Memory devices with active and passive doped sol-gel layers

Details Memory devices with active and passive doped sol-gel layers Memory devices with active and passive doped sol-gel layers

2007-12-11

2007-12-11

Smith, Matthew (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257SE29309, C257SE29330, C257SE29310, C257SE21180, C257SE21209, C257SE21210, C257SE21423, C257SE21613, C438S099000, C438S288000, C438S782000, C365S185290, C365S185310, C365S115000, C365S102000

Reexamination Certificate

active

11228842

ABSTRACT:
The present memory device includes first and second electrodes, an active layer; and a passive layer, the active and passive layers being between the first and second electrodes, with at least one of the active layer and passive layer being a doped a sol-gel.

REFERENCES:
patent: 5420746 (1995-05-01), Smith
patent: 5913117 (1999-06-01), Lee
patent: 2003/0179633 (2003-09-01), Krieger et al.
patent: 2003/0230746 (2003-12-01), Stasiak
patent: 2006/0245235 (2006-11-01), Krieger et al.

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