Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2008-09-05
2011-11-22
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S747000, C257SE45002, C257SE29323, C257SE23011
Reexamination Certificate
active
08063393
ABSTRACT:
An exemplary hollow stylus-shaped structure is disclosed, including a hollow column spacer formed over a base layer and a hollow cone spacer stacked over the hollow column spacer, wherein the hollow cone spacer, the hollow column spacer, and the base layer form a space, and sidewalls of the hollow cone spacer and the hollow column spacer are made of silicon-containing organic or inorganic materials.
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Industrial Technology Research Institute
Mandala Victor A
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