Memory devices having contact features

Details Memory devices having contact features Memory devices having contact features

2009-02-25

2011-12-13

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S910000, C257SE45002

Reexamination Certificate

active

08076783

ABSTRACT:
Annular, linear, and point contact structures are described which exhibit a greatly reduced susceptibility to process deviations caused by lithographic and deposition variations than does a conventional circular contact plug. In one embodiment, a standard conductive material such as carbon or titanium nitride is used to form the contact. In an alternative embodiment, a memory material itself is used to form the contact. These contact structures may be made by various processes, including chemical mechanical planarization and facet etching.

REFERENCES:
patent: 3241009 (1966-03-01), Dewald et al.
patent: 3423646 (1969-01-01), Cubert et al.
patent: 3602635 (1971-08-01), Romankiw
patent: 3699543 (1972-10-01), Neale
patent: 3796926 (1974-03-01), Cole et al.
patent: 3877049 (1975-04-01), Buckley
patent: 3886577 (1975-05-01), Buckley
patent: 4099260 (1978-07-01), Lynes et al.
patent: 4115872 (1978-09-01), Bluhm
patent: 4174521 (1979-11-01), Neale
patent: 4180866 (1979-12-01), Shanks
patent: 4194283 (1980-03-01), Hoffmann
patent: 4203123 (1980-05-01), Shanks
patent: 4227297 (1980-10-01), Angerstein
patent: 4272562 (1981-06-01), Wood
patent: 4375644 (1983-03-01), Mori et al.
patent: 4420766 (1983-12-01), Kasten
patent: 4433342 (1984-02-01), Patel et al.
patent: 4458260 (1984-07-01), McIntyre et al.
patent: 4499557 (1985-02-01), Holmberg et al.
patent: 4502208 (1985-03-01), McPherson
patent: 4502914 (1985-03-01), Trumpp et al.
patent: 4569698 (1986-02-01), Feist
patent: 4630355 (1986-12-01), Johnson
patent: 4641420 (1987-02-01), Lee
patent: 4642140 (1987-02-01), Noufi et al.
patent: 4666252 (1987-05-01), Yaniv et al.
patent: 4677742 (1987-07-01), Johnson
patent: 4757359 (1988-07-01), Chiao et al.
patent: 4795657 (1989-01-01), Simpson et al.
patent: 4804490 (1989-02-01), Pryor et al.
patent: 4809044 (1989-02-01), Pryor et al.
patent: 4818717 (1989-04-01), Johnson et al.
patent: 4823181 (1989-04-01), Mohsen et al.
patent: 4868616 (1989-09-01), Johnson et al.
patent: 4876220 (1989-10-01), Mohsen et al.
patent: 4876668 (1989-10-01), Thakoor et al.
patent: 4881114 (1989-11-01), Mohsen et al.
patent: 4892840 (1990-01-01), Esquivel et al.
patent: 5144404 (1992-09-01), Iranmanesh et al.
patent: 5166096 (1992-11-01), Cote et al.
patent: 5166758 (1992-11-01), Ovshinsky et al.
patent: 5177567 (1993-01-01), Klersy et al.
patent: 5183781 (1993-02-01), Nakano
patent: 5216282 (1993-06-01), Cote et al.
patent: 5223448 (1993-06-01), Su
patent: 5233217 (1993-08-01), Dixit et al.
patent: 5278099 (1994-01-01), Maeda
patent: 5293335 (1994-03-01), Pernisz et al.
patent: 5296716 (1994-03-01), Ovshinsky et al.
patent: 5310693 (1994-05-01), Hsue
patent: 5335219 (1994-08-01), Ovshinsky et al.
patent: 5341328 (1994-08-01), Ovshinsky et al.
patent: 5359205 (1994-10-01), Ovshinsky
patent: 5363329 (1994-11-01), Troyan
patent: 5406125 (1995-04-01), Johnson et al.
patent: 5414271 (1995-05-01), Ovshinsky et al.
patent: 5429988 (1995-07-01), Huang et al.
patent: 5466637 (1995-11-01), Kim
patent: 5500080 (1996-03-01), Choi
patent: 5510629 (1996-04-01), Karpovich et al.
patent: 5529956 (1996-06-01), Morishita
patent: 5534711 (1996-07-01), Ovshinsky et al.
patent: 5534712 (1996-07-01), Ovshinsky et al.
patent: 5536947 (1996-07-01), Klersy et al.
patent: 5569932 (1996-10-01), Shor et al.
patent: 5578185 (1996-11-01), Bergeron et al.
patent: 5596522 (1997-01-01), Ovshinsky et al.
patent: 5624870 (1997-04-01), Chien et al.
patent: 5648298 (1997-07-01), Cho
patent: 5665625 (1997-09-01), Sandhu et al.
patent: 5675187 (1997-10-01), Numata et al.
patent: 5687112 (1997-11-01), Ovshinsky
patent: 5705430 (1998-01-01), Avanzino et al.
patent: 5714768 (1998-02-01), Ovshinsky et al.
patent: 5714795 (1998-02-01), Ohmi et al.
patent: 5728596 (1998-03-01), Yun et al.
patent: 5751012 (1998-05-01), Wolstenholme et al.
patent: 5780340 (1998-07-01), Gardner et al.
patent: 5789277 (1998-08-01), Zahorik et al.
patent: 5789758 (1998-08-01), Reinberg
patent: 5812441 (1998-09-01), Manning
patent: 5814527 (1998-09-01), Wolstenholme et al.
patent: 5825076 (1998-10-01), Kotvas et al.
patent: 5831276 (1998-11-01), Gonzalez et al.
patent: 5841150 (1998-11-01), Gonzalez et al.
patent: 5869843 (1999-02-01), Harshfield
patent: 5874756 (1999-02-01), Ema et al.
patent: 5879955 (1999-03-01), Gonzalez et al.
patent: 5920788 (1999-07-01), Reinberg
patent: 5970336 (1999-10-01), Wolstenholme et al.
patent: 5998244 (1999-12-01), Wolstenholme et al.
patent: 6025220 (2000-02-01), Sandhu
patent: 6031287 (2000-02-01), Harshfield
patent: 6077729 (2000-06-01), Harshfield
patent: 6111264 (2000-08-01), Wolstenholme et al.
patent: 6114713 (2000-09-01), Zahorik
patent: 6117720 (2000-09-01), Harshfield
patent: 6150253 (2000-11-01), Doan
patent: 6153890 (2000-11-01), Wolstenholme et al.
patent: 6169028 (2001-01-01), Wang et al.
patent: 6225142 (2001-05-01), Reinberg
patent: 6420725 (2002-07-01), Harshfield
patent: 6429064 (2002-08-01), Wicker
patent: 6563156 (2003-05-01), Harshfield
patent: 2002/0017701 (2002-02-01), Klersy et al.
patent: 0 117 045 (1984-08-01), None
patent: 1 319 388 (1973-06-01), None
patent: 60109266 (1985-06-01), None
patent: 9836446 (1998-08-01), None
Kim and Kim, “Effects of High-Current Pulses on Polycrystalline Silicon Diode with n-type Region Heavily Doped with Both Boron and Phosphorus,”J. Appl. Phys., 53(7):5359-5360, 1982.
Neale and Aseltine, “The Application of Amorphous Materials to Computer Memories,”IEEE, 20(2):195-205, 1973.
Pein and Plummer, “Performance of the 3-D Sidewall Flash EPROM Cell,”IEEE, 11-14, 1993.
Post and Ashburn, “Investigation of Boron Diffusion in Polysilicon and its Application to the Design of pn-p. Polysilicon Emitter Bipolar Transistors with Shallow Emitter Junctions,”IEEE, 38(11):2442-2451, 1991.
Post et al., “Polysilicon Emitters for Bipolar Transistors: A Review and Re-Evaluation of Theory and Experiment,”IEEE, 39(7):1717-1731, 1992.
Post and Ashburn, “The Use of an Interface Anneal to Control the Base Current and Emitter Resistance of p-n-p. Polysilicon Emitter Bipolar Transistors,”IEEE, 13(8):408-410, 1992.
Rose et al., “Amorphous Silicon Analogue Memory Devices,”J. Non-Crystalline Solids, 115:168-170, 1989.
Schaber et al., “Laser Annealing Study of the Grain Size Effect in Polycrystalline Silicon Schottky Diodes,”J. Appl. Phys., 53(12):8827-8834, 1982.
Yamamoto et al., “The I-V Characteristics of Polycrystalline Silicon Diodes and the Energy Distribution of Traps in Grain Boundaries,”Electronics and Communications in Japan, Part 2, 75(7):51-58, 1992.
Yeh et al., “Investigation of Thermal Coefficient for Polycrystalline Silicon Thermal Sensor Diode,”Jpn. J. Appl. Phys., 31(Part 1, No. 2A):151-155, 1992.
Oakley et al., “Pillars—The Way to Two Micron Pitch Multilevel Metallisation,”IEEE, 23-29, 1984.
Prince, “Semiconductor Memories,” A Handbook of Design, Manufacture, and Application, 2ndEd., pp. 118-123.

Affiliated with

Also associated with

Rating

Memory devices having contact features does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory devices having contact features, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory devices having contact features will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4312395