Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2007-09-25
2007-09-25
Ngô, Ngân V. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257SE51027
Reexamination Certificate
active
10927174
ABSTRACT:
A composition for the formation of an electric field programmable film, the composition comprising a matrix precursor composition or a dielectric matrix material, wherein the dielectric matrix material comprises an organic polymer and/or a inorganic oxide; and an electron donor and an electron acceptor of a type and in an amount effective to provide electric field programming. The films are of utility in data storage devices.
REFERENCES:
patent: 3833894 (1974-09-01), Aviram et al.
patent: 4144418 (1979-03-01), Girard et al.
patent: 4371883 (1983-02-01), Potember et al.
patent: 4507672 (1985-03-01), Potember et al.
patent: 4652894 (1987-03-01), Potember et al.
patent: 4663270 (1987-05-01), Potember et al.
patent: 4987023 (1991-01-01), Sato et al.
patent: 5238607 (1993-08-01), Herron et al.
patent: 6015631 (2000-01-01), Park
patent: 6055180 (2000-04-01), Gudesen et al.
patent: 6229047 (2001-05-01), Glaser et al.
patent: 6631085 (2003-10-01), Kleveland et al.
patent: 6828685 (2004-12-01), Stasiak
patent: 2002/0163828 (2002-11-01), Krieger et al.
patent: 2002/0163831 (2002-11-01), Krieger et al.
patent: 2002/0195600 (2002-12-01), Leuschner
patent: 2003/0053350 (2003-03-01), Krieger et al.
patent: 2003/0155602 (2003-08-01), Kreiger et al.
patent: 2003/0173612 (2003-09-01), Kreiger et al.
patent: 2003/0178667 (2003-09-01), Kreiger et al.
patent: 2003/0179633 (2003-09-01), Kreiger et al.
patent: 2004/0026714 (2004-02-01), Kreiger et al.
patent: 2004/0159835 (2004-08-01), Kreiger et al.
patent: 2004/0160801 (2004-08-01), Kreiger et al.
patent: 2004/0246768 (2004-12-01), Kreiger et al.
patent: WO 01/71814 (2001-09-01), None
patent: WO 02/091496 (2002-11-01), None
patent: WO2004/064074 (2004-07-01), None
Silva, et al., Bistable Switching And Memory Devices; Journal of Non-Crystalline Solids; (1970) pp. 316-333; No. Holland Publishing Co., Amsterdam.
Bozano, et al.; Mechanism for Bistability in Organic Memory Elements; Applied Physics Letters, (2004); vol. 84, No. 4, pp. 607-609; 2004 American Institute of Physics.
Hua, et al.; New Organic Bistable Films for Ultrafast Electric Memories; Applied Surface Science, 169-170 (2001) pp. 447-451, Elsevier Science B.V.
Beinhoff, et al., Polybiphenylmethylenes: New Polymers for Bistable Organic Switches; Polymeric Materials: Science and Engineering 90, (2004) 211, 212, U.S.
Sezi, et al.; Organic Materials for High-Density Non-Volatile Memory Applications; Proc. IEEE Int. Elec. Dev. Meeting; (2003); Germany.
Kevorkian, et al.; Bistable Switching in Organic Thin Films; Discussions of the Faraday Society, 51, (1971) pp. 139-142; U.S.
Pei, Qibing et al., “Polymer Light-Emitting Electrochemical Cells”,Science, New Series, vol. 269, No. 5227 (Aug. 25, 1995), pp. 1086-1088.
Ouyang Jianyong
Szmanda Charles R.
Yang Yang
Daley Henry J.
Ngo Ngan V.
The Regents of the University of California
Venable LLP
LandOfFree
Memory devices based on electric field programmable films does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Memory devices based on electric field programmable films, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory devices based on electric field programmable films will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3790052