Memory device with chemical vapor deposition of titanium for...

Details Memory device with chemical vapor deposition of titanium for... Memory device with chemical vapor deposition of titanium for...

2005-06-07

2008-10-28

Williams, Alexander O (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257SE23161, C257SE23167, C257SE23029, C257SE21168, C257SE21584, C257S906000, C257S296000, C257S750000, C257S763000, C257S764000

Reexamination Certificate

active

07443032

ABSTRACT:
A titanium layer is formed on a substrate with chemical vapor deposition (CVD). First, a seed layer is formed on the substrate by combining a first precursor with a reducing agent by CVD. Then, the titanium layer is formed on the substrate by combining a second precursor with the seed layer by CVD. The titanium layer is used to form contacts to active areas of substrate and for the formation of interlevel vias.

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