Memory device with a ramp-like voltage biasing structure...

Details Memory device with a ramp-like voltage biasing structure... Memory device with a ramp-like voltage biasing structure...

2008-04-15

2008-04-15

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185200, C365S185030, C365S150000, C365S208000, C365S189050

Reexamination Certificate

active

11340414

ABSTRACT:
A memory device includes a plurality of memory cells each one for storing a value, at least one reference cell, biasing means for biasing a set of selected memory cells and the at least one reference cell with a biasing voltage having a substantially monotone time pattern, means for detecting the reaching of a threshold value by a current of each selected memory cell and of each reference cell, and means for determining the value stored in each selected memory cell according to a temporal relation of the reaching of the threshold value by the currents of the selected memory cell and of the at least one reference cell. The biasing means includes means for applying a controlled biasing current to the selected memory cells and to the at least one reference cell.

REFERENCES:
patent: 5687115 (1997-11-01), Wong et al.
patent: 5748533 (1998-05-01), Dunlap et al.
patent: 5933366 (1999-08-01), Yoshikawa
patent: 6195289 (2001-02-01), Pasotti et al.
patent: 6275417 (2001-08-01), Lee et al.
patent: 6621737 (2003-09-01), Naura et al.
patent: 7054197 (2006-05-01), Vimercati
patent: 7075844 (2006-07-01), Pagliato et al.
patent: 2006/0209594 (2006-09-01), Pio et al.
patent: 2006/0215463 (2006-09-01), Vimercati et al.
patent: 0 798 739 (1997-10-01), None
patent: 1 467 377 (2004-10-01), None

Affiliated with

Also associated with

Rating

Memory device with a ramp-like voltage biasing structure... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory device with a ramp-like voltage biasing structure..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory device with a ramp-like voltage biasing structure... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3913812