Memory device utilizing ion beam readout

Details Memory device utilizing ion beam readout Memory device utilizing ion beam readout

1977-07-08

1978-05-09

Dixon, Harold A.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250309, G01M 2300

Patent

active

040888959

ABSTRACT:
The invention is a memory for use in computing machines, in which the presence of a stored bit of information in a substrate is detected by a scanned ion beam of high brightness focused to a very small diameter. Bits of 4000 Angstrom dimension may be written in times as short as 100 nanoseconds by means of ion beams, and read out in times shorter than one nanosecond. A memory with such a bit size having a capacity of 10.sup.8 bits occupies 4 .times. 4 mm.sup.2 of substrate surface. By detecting the charge of high-energy ions transmitted through a thin substrate, bits smaller than 1000 Angstroms in dimension may be detected with good signal-to-noise ratio in less than 1 nanosecond.

REFERENCES:
patent: 3434894 (1969-03-01), Gale
patent: 3445926 (1969-05-01), Medved et al.
patent: 3878392 (1975-04-01), Yew et al.

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