Memory device manufacturing method

Details Memory device manufacturing method Memory device manufacturing method

2011-07-05

2011-07-05

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C257S004000, C257SE45002

Reexamination Certificate

active

07972893

ABSTRACT:
A method for making a memory device includes providing a dielectric material, having first and second upwardly and inwardly tapering surfaces and a surface segment connecting the first and second surfaces. First and second electrodes are formed over the first and second surfaces. A memory element is formed over the surface segment to electrically connect the first and second electrodes.

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