Memory device, in particular phase change random access...

Details Memory device, in particular phase change random access... Memory device, in particular phase change random access...

2006-06-02

2009-12-01

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S004000, C257S009000, C257S213000, C257SE29002, C365S163000, C977S936000, C977S762000, C977S773000, C977S932000

Reexamination Certificate

active

07626190

ABSTRACT:
A memory device, in particular to a resistively switching memory device such as a Phase Change Random Access Memory (“PCRAM”), with a transistor is disclosed. Further, the invention relates to a method for fabricating a memory device. According one embodiment of the invention, a memory device is provided, having at least one nanowire or nanotube or nanofibre access transistor. In one embodiment, the nanowire or nanotube or nanofibre access transistor directly contacts a switching active material of the memory device. According to an additional embodiment, a memory device includes at least one nanowire or nanotube or nanofibre transistor with a vertically arranged nanowire or nanotube or nanofibre.

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